Datasheet > CMLT8099MPBFREE

CMLT8099MPBFREE

更新时间： 2024-11-06 20:08:43

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
3页	594K
描述
Small Signal Bipolar Transistor,

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技术参数
数据手册

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CMLT8099MPBFREE 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.7
Base Number Matches：	1

CMLT8099MPBFREE 数据手册

CMLT8099M

www.centralsemi.com

SURFACE MOUNT SILICON

DUAL, MATCHED

DESCRIPTION:

NPN TRANSISTOR

The CENTRAL SEMICONDUCTOR CMLT8099M

consists of two individual, isolated 8099 NPN silicon

transistors with matched V

This device is manufactured by the epitaxial planar

process and epoxy molded in an

characteristics.

BE(ON)

SOT-563 surface mount package.

MARKING CODE: 8CM

SOT-563 CASE

• Device is Halogen Free by design

APPLICATIONS:

FEATURES:

• Small signal general purpose amplifiers

• Transistor pair matched for V

BE(ON)

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continous Collector Current

Power Dissipation

SYMBOL

UNITS

6.0

500

350

CBO

CEO

EBO

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

0.1

UNITS

=80V

=6.0V

μA

CBO

EBO

I =100μA

6.0

CBO

CEO

EBO

I =10mA

I =10μA

I =100mA, I =5.0mA

0.4

0.3

0.8

300

CE(SAT)

BE(ON)

I =100mA, I =10mA

=5.0V, I =10mA

0.6

100

=5.0V, I =1.0mA

=5.0V, I =10mA

=5.0V, I =100mA

=5.0V, I =10mA, f=100MHz

150

MHz

=10V, I =0, f=1.0MHz

6.0

=0.5V, I =0, f=1.0MHz

MATCHING CHARACTERISTICS:

SYMBOL TEST CONDITIONS

MIN

MAX

UNITS

-V

=5.0V, I =1.0μA

BE1 BE2

-V

=5.0V, I =5.0μA

BE1 BE2

-V

=5.0V, I =10μA

BE1 BE2

-V

BE1 BE2

=5.0V, I =100μA

R3 (29-June 2015)

12 3

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