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CMLTA44TR PDF预览

CMLTA44TR

更新时间: 2024-11-02 13:01:19
品牌 Logo 应用领域
CENTRAL 晶体晶体管高压
页数 文件大小 规格书
2页 96K
描述
Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, PICOMINI-6

CMLTA44TR 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.74Is Samacsys:N
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PDSO-F6JESD-609代码:e0
元件数量:1端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

CMLTA44TR 数据手册

 浏览型号CMLTA44TR的Datasheet PDF文件第2页 
TM  
CMLTA44  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
TM  
PICOmini  
EXTREMELY HIGH VOLTAGE  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLTA44  
type is an NPN High Voltage transistor, epoxy  
molded in a space saving PICOmini™ SOT-563  
surface mount package and designed for  
extremely high voltage applications.  
C
C
E
MARKING CODE: 44C  
C
C
B
SOT-563 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
V
V
V
mA  
mW  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
V
V
V
450  
400  
6.0  
300  
250  
CBO  
CEO  
EBO  
C
P
I
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
500  
°C  
°C/W  
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=400V  
=400V  
=4.0V  
100  
500  
100  
nA  
nA  
nA  
V
CBO  
CES  
EBO  
CB  
CE  
BE  
BV  
BV  
BV  
BV  
I =100µA  
450  
450  
400  
6.0  
CBO  
CES  
CEO  
C
I =100µA  
V
V
V
V
V
V
V
C
I =1.0mA  
C
I =10µA  
EBO  
E
V
V
V
V
I =1.0mA, I =0.1mA  
0.40  
0.50  
0.75  
0.75  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
FE  
C
C
B
B
B
B
I =10mA, I =1.0mA  
I =50mA, I =5.0mA  
C
I =10mA, I =1.0mA  
C
h
h
h
h
V
=10V, I =1.0mA  
40  
50  
45  
20  
20  
CE  
CE  
CE  
CE  
CE  
CB  
EB  
C
V
V
V
V
V
V
=10V, I =10mA  
200  
FE  
FE  
FE  
C
=10V, I =50mA  
C
=10V, I =100mA  
C
f
=10V, I =10mA, f=10MHz  
MHz  
pF  
pF  
T
C
C
C
=20V, I =0, f=1.0MHz  
7.0  
130  
ob  
ib  
E
=0.5V, I =0, f=1.0MHz  
C
R0 (28-October 2004)  

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