Datasheet > CMLT8099TIN/LEAD

CMLT8099TIN/LEAD

更新时间： 2024-09-16 21:06:11

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
3页	493K
描述
Small Signal Bipolar Transistor,

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技术参数
数据手册

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CMLT8099TIN/LEAD 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.71
Base Number Matches：	1

CMLT8099TIN/LEAD 数据手册

CMLT8099

www.centralsemi.com

SURFACE MOUNT SILICON

DUAL NPN TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT8099

consists of two individual, isolated 8099 NPN silicon

transistors, manufactured by the epitaxial planar

process and epoxy molded in an SOT-563 surface

mount package. This device has been designed for

small signal general purpose amplifier applications.

MARKING CODE: C89

SOT-563 CASE

FEATURES:

• Device is Halogen Free by design

APPLICATIONS:

• Small signal general purpose amplifiers

• Current I =500mA

• Voltage V

=80V

CEO

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

500

350

Continous Collector Current

Power Dissipation

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

MIN

SYMBOL

TEST CONDITIONS

MAX

UNITS

=80V

0.1

µA

CBO

EBO

=6.0V

0.1

µA

I =100µA

CBO

CEO

I =10mA

I =10µA

6.0

EBO

I =100mA, I =5.0mA

0.4

0.3

0.8

300

CE(SAT)

BE(ON)

I =100mA, I =10mA

=5.0V, I =10mA

0.6

100

=5.0V, I =1.0mA

=5.0V, I =10mA

=5.0V, I =100mA

=5.0V, I =10mA, f=100MHz

150

MHz

=10V, I =0, f=1.0MHz

6.0

=0.5V, I =0, f=1.0MHz

R4 (2-May 2019)

12 3

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