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CMLT8099MTIN/LEAD PDF预览

CMLT8099MTIN/LEAD

更新时间: 2024-11-06 13:06:55
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 673K
描述
Small Signal Bipolar Transistor,

CMLT8099MTIN/LEAD 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.71
Is Samacsys:NBase Number Matches:1

CMLT8099MTIN/LEAD 数据手册

 浏览型号CMLT8099MTIN/LEAD的Datasheet PDF文件第2页 
CMLT8099M  
www.centralsemi.com  
SURFACE MOUNT  
DUAL, MATCHED  
NPN SILICON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLT8099M  
consists of two individual, isolated 8099 NPN silicon  
transistors with matched V  
characteristics.  
BE(ON)  
This PICOmini™ device is manufactured by the  
epitaxial planar process and epoxy molded in an  
SOT-563 surface mount package.  
MARKING CODE: 8CM  
SOT-563 CASE  
• Device is Halogen Free by design  
APPLICATIONS:  
FEATURES:  
• Small signal general purpose amplifiers  
• Transistor pair matched for V  
BE(ON)  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continous Collector Current  
Power Dissipation  
SYMBOL  
UNITS  
V
V
A
V
V
V
80  
80  
6.0  
500  
350  
CBO  
CEO  
EBO  
V
I
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
-65 to +150  
357  
J
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
0.1  
0.1  
UNITS  
I
I
V
V
=80V  
=6.0V  
µA  
µA  
V
V
V
V
V
V
CBO  
EBO  
CB  
BE  
BV  
BV  
BV  
I =100µA  
80  
80  
6.0  
CBO  
CEO  
EBO  
C
I =10mA  
C
I =10µA  
E
V
V
V
I =100mA, I =5.0mA  
0.4  
0.3  
0.8  
300  
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
C
B
B
C
I =100mA, I =10mA  
C
V
=5.0V, I =10mA  
0.6  
100  
100  
75  
CE  
CE  
CE  
CE  
CE  
CB  
BE  
h
h
h
V
V
V
V
V
V
=5.0V, I =1.0mA  
C
=5.0V, I =10mA  
FE  
FE  
C
=5.0V, I =100mA  
C
f
=5.0V, I =10mA, f=100MHz  
150  
MHz  
pF  
pF  
T
C
C
C
=10V, I =0, f=1.0MHz  
6.0  
25  
ob  
ib  
E
=0.5V, I =0, f=1.0MHz  
C
MATCHING CHARACTERISTICS:  
SYMBOL TEST CONDITIONS  
MIN  
MAX  
10  
10  
10  
10  
UNITS  
mV  
mV  
mV  
mV  
|V  
|V  
|V  
|V  
-V  
|
|
|
|
V
V
V
V
=5.0V, I =1.0µA  
BE1 BE2  
CE  
CE  
CE  
CE  
C
-V  
BE1 BE2  
=5.0V, I =5.0µA  
C
-V  
=5.0V, I =10µA  
BE1 BE2  
C
-V  
BE1 BE2  
=5.0V, I =100µA  
C
R1 (20-January 2010)  

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