CMLT8099M

更新时间： 2024-11-02 09:27:35

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	673K
描述
SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS

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CMLT8099M 数据手册

CMLT8099M

www.centralsemi.com

SURFACE MOUNT

DUAL, MATCHED

NPN SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT8099M

consists of two individual, isolated 8099 NPN silicon

transistors with matched V

characteristics.

BE(ON)

This PICOmini™ device is manufactured by the

epitaxial planar process and epoxy molded in an

SOT-563 surface mount package.

MARKING CODE: 8CM

SOT-563 CASE

• Device is Halogen Free by design

APPLICATIONS:

FEATURES:

• Small signal general purpose amplifiers

• Transistor pair matched for V

BE(ON)

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continous Collector Current

Power Dissipation

SYMBOL

UNITS

6.0

500

350

CBO

CEO

EBO

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

stg

-65 to +150

357

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

0.1

UNITS

=80V

=6.0V

µA

CBO

EBO

I =100µA

6.0

CBO

CEO

EBO

I =10mA

I =10µA

I =100mA, I =5.0mA

0.4

0.3

0.8

300

CE(SAT)

BE(ON)

I =100mA, I =10mA

=5.0V, I =10mA

0.6

100

=5.0V, I =1.0mA

=5.0V, I =10mA

=5.0V, I =100mA

=5.0V, I =10mA, f=100MHz

150

MHz

=10V, I =0, f=1.0MHz

6.0

=0.5V, I =0, f=1.0MHz

MATCHING CHARACTERISTICS:

SYMBOL TEST CONDITIONS

MIN

MAX

UNITS

-V

=5.0V, I =1.0µA

BE1 BE2

-V

BE1 BE2

=5.0V, I =5.0µA

-V

=5.0V, I =10µA

BE1 BE2

-V

BE1 BE2

=5.0V, I =100µA

R1 (20-January 2010)

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