Datasheet > CMLT7820GTIN/LEAD

CMLT7820GTIN/LEAD

更新时间： 2024-11-01 21:10:31

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
3页	431K
描述
Small Signal Bipolar Transistor,

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技术参数
数据手册

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CMLT7820GTIN/LEAD 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.72
Base Number Matches：	1

CMLT7820GTIN/LEAD 数据手册

CMLT7820G

www.centralsemi.com

SURFACE MOUNT SILICON

VERY LOW V

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT7820G is

a very low V PNP Transistor, designed for

applications where small size and efficiency are the

prime requirements. Packaged in a space saving

SOT-563 surface mount package, this component

provides performance characteristics suitable for the

most demanding size constrained applications.

CE(SAT)

PNP TRANSISTOR

CE(SAT)

MARKING CODE: 78G

FEATURES:

SOT-563 CASE

APPLICATIONS:

Device is Halogen Free by design

•

• DC/DC Converters

• High Current (I =1.0A)

Voltage Clamping

•

=0.34V MAX @

I =1.0A

•

Protection Circuits

Battery powered Cell Phones, Pagers,

Digital Cameras, PDAs, Laptops, etc.

CE(SAT)

SOT563 surface mount package

Complementary NPN device CMLT3820G

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

UNITS

5.0

1.0

2.0

CBO

CEO

EBO

300

250

-65 to +150

500

°C

°C/W

T , T

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

100

UNITS

=60V

=5.0V

CBO

EBO

I =100μA

5.0

CBO

CEO

EBO

I =10mA

I =100μA

I =100mA, I =1.0mA

0.175

0.18

0.34

1.1

CE(SAT)

BE(SAT)

BE(ON)

I =500mA, I =50mA

I =1.0A, I =100mA

I =1.0A, I =50mA

=5.0V, I =1.0A

0.9

=5.0V, I =1.0mA

200

150

100

150

=5.0V, I =500mA

=5.0V, I =1.0A

=10V, I =50mA

MHz

=10V, I =0, f=1.0MHz

R4 (29-June 2015)

12 3

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