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CMLT7820GTRLEADFREE PDF预览

CMLT7820GTRLEADFREE

更新时间: 2024-11-05 13:06:59
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
2页 108K
描述
Transistor

CMLT7820GTRLEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):1 A
配置:Single最小直流电流增益 (hFE):100
JESD-609代码:e3湿度敏感等级:1
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.25 W子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
标称过渡频率 (fT):150 MHzBase Number Matches:1

CMLT7820GTRLEADFREE 数据手册

 浏览型号CMLT7820GTRLEADFREE的Datasheet PDF文件第2页 
TM  
CMLT7820G  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
TM  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLT7820G is  
a very low V PNP Transistor, designed for  
PICOmini  
VERY LOW V  
CE(SAT)  
PNP SILICON TRANSISTOR  
CE(SAT)  
applications where small size and efficiency are the  
prime requirements. Packaged in a space saving  
PICOmini™ SOT-563 surface mount package, this  
component provides performance characteristics  
suitable for the most demanding size constrained  
applications.  
C
C
E
C
C
B
MARKING CODE: 78G  
FEATURES:  
SOT-563 CASE  
APPLICATIONS:  
DC/DC Converters  
Device is Halogen Free by design  
High Current (I =1.0A)  
Voltage Clamping  
Protection Circuits  
Battery powered Cell Phones, Pagers,  
Digital Cameras, PDAs, Laptops, etc.  
C
V
=0.34V MAX @  
I =1.0A  
CE(SAT)  
C
PICOmini™ SOT563 surface mount package  
Complementary NPN device CMLT3820G  
SYMBOL  
MAXIMUM RATINGS: (T =25°C)  
UNITS  
V
V
V
A
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
80  
60  
5.0  
1.0  
2.0  
CBO  
CEO  
EBO  
Continuous Collector Current  
Peak Collector Current  
Base Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
I
C
I
A
CM  
I
P
300  
250  
-65 to +150  
500  
mA  
mW  
°C  
B
D
T , T  
stg  
J
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
UNITS  
I
I
V
V
=60V  
=5.0V  
nA  
nA  
V
V
V
V
V
V
V
CBO  
EBO  
CBO  
CEO  
CB  
EB  
BV  
BV  
BV  
I =100μA  
80  
60  
5.0  
C
I =10mA  
C
I =100μA  
EBO  
E
V
V
V
V
V
h
h
h
I =100mA, I =1.0mA  
0.175  
0.18  
0.34  
1.1  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
B
I =500mA, I =50mA  
C
I =1.0A, I =100mA  
C
B
B
I =1.0A, I =50mA  
C
V
=5.0V, I =1.0A  
0.9  
V
CE  
CE  
CE  
CE  
CE  
CB  
C
V
V
V
V
V
=5.0V, I =1.0mA  
=5.0V, I =500mA  
200  
150  
100  
150  
C
FE  
FE  
C
C
=5.0V, I =1.0A  
f
=10V, I =50mA  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
15  
ob  
E
R1 (30-September 2008)  

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