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CMLT591ETRPBFREE

更新时间： 2024-11-01 13:06:55

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	92K
描述
Transistor,

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中文翻译

获取价格

技术参数
数据手册

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CMLT591ETRPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	最大集电极电流 (IC)：	1 A
配置：	Single	最小直流电流增益 (hFE)：	200
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.25 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	150 MHz
Base Number Matches：	1

CMLT591ETRPBFREE 数据手册

Central

CMLT591E

Semiconductor Corp.

SURFACE MOUNT

PICOmini

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT591E

type is a PNP Low V

1.0 Amp transistor,

CE(Sat)

epoxy molded in a space saving PICOmini™

SOT-563 surface mount package and designed

for applications requiring a high current capability

and low saturation voltages.

MARKING CODE: L59

SOT-563 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Current (Peak)

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

CBO

CEO

EBO

5.0

1.0

200

2.0

250

T ,T

stg

-65 to +150

500

°C

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

100

UNITS

=60V

=4.0V

CBO

EBO

CBO

CEO

I =100µA

5.0

I =10mA

I =100µA

EBO

I =500mA, I =50mA

0.20

0.40

1.1

CE(SAT)

BE(SAT)

BE(ON)

I =1.0A, I =100mA

=5.0V, I =1.0A

1.0

=5.0V, I =1.0mA

200

150

=5.0V, I =500mA

600

=5.0V, I =1.0A

=5.0V, I =2.0A

=10V, I =50mA, f=100MHz

MHz

=10V, I =0, f=1.0MHz

R2 (7-August 2003)

中文翻译

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