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CMLT7410G PDF预览

CMLT7410G

更新时间: 2024-11-01 19:38:03
品牌 Logo 应用领域
CENTRAL 开关光电二极管晶体管
页数 文件大小 规格书
2页 465K
描述
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, PNP, Silicon, PICOMINI-6

CMLT7410G 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.8
最大集电极电流 (IC):1 A集电极-发射极最大电压:25 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-F6JESD-609代码:e0
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

CMLT7410G 数据手册

 浏览型号CMLT7410G的Datasheet PDF文件第2页 
TM  
CMLT3410 CMLT3410G* NPN  
CMLT7410 CMLT7410G* PNP  
CMLT3474 CMLT3474G* NPN/PNP  
Central  
Semiconductor Corp.  
SURFACE MOUNT PICOmini™  
DESCRIPTION:  
These dual devices are low V  
DUAL LOW V  
SILICON TRANSISTORS  
silicon  
CE(SAT)  
CE(SAT)  
transistors in a PICOmini™ surface mount package  
designed for small signal general purpose amplifier  
and switching applications requiring low collector  
emitter saturation voltage.  
MARKING CODES:  
CMLT3410: C34  
CMLT7410: C74  
CMLT3474: C37  
CMLT3410G: 34G  
CMLT7410G: 74G  
CMLT3474G: 37G  
SOT-563 CASE  
Device is Halogen Free by design  
*
o
MAXIMUM RATINGS: (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Current (Peak)  
Power Dissipation  
Operating and Storage  
Junction Temperature  
Thermal Resistance  
V
V
V
40  
25  
6.0  
1.0  
1.5  
350  
V
V
V
A
A
CBO  
CEO  
EBO  
I
C
I
CM  
P
mW  
D
o
T ,T  
stg  
-65 to +150  
357  
C
J
o
Θ
C/W  
JA  
o
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25 C unless otherwise noted)  
A
TYP  
SYMBOL  
TEST CONDITIONS  
MIN  
NPN  
PNP  
MAX  
100  
100  
UNITS  
nA  
nA  
V
V
V
mV  
mV  
mV  
mV  
mV  
mV  
V
I
I
V
V
=40V  
=6.0V  
CBO  
EBO  
CBO  
CEO  
CB  
EB  
BV  
BV  
BV  
I =100μA  
40  
25  
6.0  
C
I =10mA  
C
I =100μA  
EBO  
E
V
V
V
V
V
V
V
V
I =50mA, I =5.0mA  
20  
35  
75  
130  
200  
250  
25  
40  
80  
150  
220  
275  
50  
75  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
B
B
B
I =100mA, I =10mA  
C
I =200mA, I =20mA  
150  
250  
400  
450  
1.1  
0.9  
C
I =500mA, I =50mA  
C
I =800mA, I =80mA  
C
B
I =1.0A, I =100mA  
C
B
I =800mA, I =80mA  
C
B
C
C
C
C
C
C
E
V
=1.0V, I =10mA  
V
CE  
CE  
CE  
CE  
CE  
CE  
CB  
CB  
h
h
h
h
V
V
V
V
V
V
V
=1.0V, I =10mA  
=1.0V, I =100mA  
=1.0V, I =500mA  
=1.0V, I =1.0A  
=10V, I =50mA, f=100MHz  
=10V, I =0, f=1.0MHz (CMLT3410)  
=10V, I =0, f=1.0MHz (CMLT7410)  
100  
100  
100  
50  
300  
FE  
FE  
FE  
f
100  
MHz  
pF  
pF  
T
C
C
10  
15  
ob  
ob  
E
R1 (7-April 2009)  

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