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CMLT591ELEADFREE PDF预览

CMLT591ELEADFREE

更新时间: 2024-09-14 20:01:39
品牌 Logo 应用领域
CENTRAL 光电二极管晶体管
页数 文件大小 规格书
2页 449K
描述
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, PICOMINI-6

CMLT591ELEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.36最大集电极电流 (IC):1 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):15JESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

CMLT591ELEADFREE 数据手册

 浏览型号CMLT591ELEADFREE的Datasheet PDF文件第2页 
CMLT591E  
www.centralsemi.com  
SURFACE MOUNT SILICON  
PNP TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLT591E is a  
PNP Low V 1.0 Amp transistor, epoxy molded  
CE(SAT)  
in a space saving SOT-563 surface mount package  
and designed for applications requiring a high current  
capability and low saturation voltages.  
MARKING CODE: L59  
SOT-563 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
80  
60  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
5.0  
V
Continuous Collector Current  
Peak Collector Current  
I
1.0  
A
C
I
2.0  
A
CM  
Continuous Base Current  
Power Dissipation  
I
200  
mA  
mW  
°C  
B
P
250  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
500  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
UNITS  
I
I
V
V
=60V  
nA  
nA  
V
CBO  
EBO  
CB  
EB  
=4.0V  
100  
BV  
BV  
BV  
I =100μA  
80  
60  
CBO  
CEO  
C
I =10mA  
V
C
I =100μA  
5.0  
V
EBO  
E
V
V
V
V
I =500mA, I =50mA  
0.20  
0.40  
1.1  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
I =1.0A, I =100mA  
V
C
B
I =1.0A, I =100mA  
V
C
B
V
=5.0V, I =1.0A  
1.0  
V
CE  
CE  
CE  
CE  
CE  
CE  
CB  
C
h
h
h
h
V
V
V
V
V
V
=5.0V, I =1.0mA  
200  
200  
50  
C
=5.0V, I =500mA  
600  
10  
FE  
C
=5.0V, I =1.0A  
FE  
C
=5.0V, I =2.0A  
15  
FE  
C
f
=10V, I =50mA, f=100MHz  
150  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
ob  
E
R4 (12-February 2014)  

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