Datasheet > CMLT5551_10

CMLT5551_10

更新时间： 2024-11-01 09:27:35

品牌	Logo	应用领域
CENTRAL		晶体开关晶体管高压
页数	文件大小	规格书
2页	576K
描述
SURFACE MOUNT DUAL NPN SMALL SIGNAL HIGH VOLTAGE SILICON SWITCHING TRANSISTORS

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数据手册

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CMLT5551_10 数据手册

CMLT5551

SURFACE MOUNT

DUAL NPN SMALL SIGNAL

HIGH VOLTAGE

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT5551

consists of two individual, isolated NPN silicon

transistors, manufactured by the epitaxial planar

process and epoxy molded in an SOT-563 suface

mount package. This PICOmini™ devices has been

designed for high voltage amplifier applications.

SILICON SWITCHING TRANSISTORS

MARKING CODE: 5C5

SOT-563 CASE

MAXIMUM RATINGS: (T =25 C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

180

160

6.0

600

350

CBO

CEO

EBO

T , T

-65 to +150

357

stg

C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25 C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=120V

μA

CBO

=120V, T =100°C

I =100μA

180

160

6.0

CBO

CEO

I =1.0mA

I =10μA

EBO

I =10mA, I =1.0mA

0.15

0.20

1.00

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =50mA, I =5.0mA

=5.0V, I =1.0mA

=5.0V, I =10mA

250

=5.0V, I =50mA

=10V, I =10mA, f=100MHz

100

300

6.0

MHz

=10V, I =0, f=1.0MHz

=10V, I =1.0mA, f=1.0kHz

200

=5.0V, I =200μA, R =10Ω,

C S

f=10Hz to 15.7kHz

8.0

R1 (20-January 2010)

中文翻译

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