CMLT5551HCTR

更新时间： 2024-09-14 13:06:55

品牌	Logo	应用领域
CENTRAL		晶体开关晶体管
页数	文件大小	规格书
2页	90K
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CMLT5551HCTR 数据手册

CMLT5551

Central

Semiconductor Corp.

SURFACE MOUNT

PICOmini

DUAL NPN SMALL SIGNAL

DESCRIPTION:

SILICON SWITCHING TRANSISTORS

The CENTRAL SEMICONDUCTOR CMLT5551

consists of two individual, isolated NPN silicon

transistors, manufactured by the epitaxial planar

process and epoxy molded in an SOT-563

surface mount package. This PICOmini™

devices has been designed for small signal

general purpose and switching applications.

MARKING CODE: 5C5

SOT-563 CASE

MAXIMUM RATINGS: (T =25^OC)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

180

160

6.0

600

350

CBO

CEO

EBO

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

-65 to +150

357

^OC

stg

^OC/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25^OC unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=120V

=120V, T =100°C

µA

CBO

I =100µA

180

160

6.0

CBO

CEO

EBO

I =1.0mA

I =10µA

I =10mA, I =1.0mA

0.15

0.20

1.00

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =50mA, I =5.0mA

=5.0V, I =1.0mA

=5.0V, I =10mA

250

=5.0V, I =50mA

=10V, I =10mA, f=100MHz

100

300

6.0

200

8.0

MHz

=10V, I =0, f=1.0MHz

=10V, I =1.0mA, f=1.0kHz

=5.0V, I =200µA, R =10Ω

f=10Hz to 15.7kHz

R0 (15-October 2004)

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