Datasheet > CMLT5554BK

CMLT5554BK

更新时间： 2024-11-02 04:07:19

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	576K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6

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数据手册

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CMLT5554BK 数据手册

CMLT5554

SURFACE MOUNT

DUAL,COMPLEMENTARY

HIGH VOLTAGE

www.centralsemi.com

The CENTRAL SEMICONDUCTOR CMLT5554

consists of one 2N5551 NPN silicon transistor and one

individual isolated complementary 2N5401 PNP silicon

transistor, manufactured by the epitaxial planar process

and epoxy molded in an SOT-563 surface mount

package. This PICOmini™ device has been designed

for high voltage amplifier applications.

SILICON TRANSISTORS

MARKING CODE: 5C4

SOT-563 CASE

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

NPN (Q1)

180

PNP (Q2)

160

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

160

150

6.0

5.0

Continuous Collector Current

Power Dissipation

600

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

NPN (Q1)

PNP (Q2)

SYMBOL

TEST CONDITIONS

MIN MAX

UNITS

μA

=120V

=100V

CBO

=120V, T =100°C

=100V, T =150°C

I =100μA

180

160

6.0

160

150

5.0

CBO

CEO

I =1.0mA

I =10μA

EBO

I =10mA, I =1.0mA

0.15

0.2

1.0

0.2

0.5

1.0

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =50mA, I =5.0mA

=5.0V, I =1.0mA

100

=5.0V, I =10mA

250

240

=5.0V, I =50mA

=10V, I =10mA, f=100MHz

300

6.0

200

100 300

MHz

=10V, I =0, f=1.0MHz

6.0

=10V, I =1.0mA, f=1.0kHz

200

=5.0V, I =200μA, R =10Ω,

f=10Hz to 15.7kHz

C S

8.0

R1 (20-January 2010)

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