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CMLT5554BKLEADFREE PDF预览

CMLT5554BKLEADFREE

更新时间: 2024-09-14 20:05:23
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 576K
描述
Small Signal Bipolar Transistor, 0.6A I(C), NPN and PNP

CMLT5554BKLEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.8最大集电极电流 (IC):0.6 A
最小直流电流增益 (hFE):60最高工作温度:150 °C
极性/信道类型:NPN/PNP最大功率耗散 (Abs):0.35 W
子类别:BIP General Purpose Small Signal表面贴装:YES
标称过渡频率 (fT):100 MHzBase Number Matches:1

CMLT5554BKLEADFREE 数据手册

 浏览型号CMLT5554BKLEADFREE的Datasheet PDF文件第2页 
CMLT5554  
SURFACE MOUNT  
DUAL,COMPLEMENTARY  
HIGH VOLTAGE  
www.centralsemi.com  
The CENTRAL SEMICONDUCTOR CMLT5554  
consists of one 2N5551 NPN silicon transistor and one  
individual isolated complementary 2N5401 PNP silicon  
transistor, manufactured by the epitaxial planar process  
and epoxy molded in an SOT-563 surface mount  
package. This PICOmini™ device has been designed  
for high voltage amplifier applications.  
SILICON TRANSISTORS  
MARKING CODE: 5C4  
SOT-563 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
NPN (Q1)  
180  
PNP (Q2)  
160  
UNITS  
V
A
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
160  
150  
V
6.0  
5.0  
V
Continuous Collector Current  
Power Dissipation  
I
600  
350  
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
NPN (Q1)  
PNP (Q2)  
SYMBOL  
TEST CONDITIONS  
MIN MAX  
MIN MAX  
UNITS  
nA  
nA  
μA  
μA  
V
I
I
I
I
V
V
V
V
=120V  
=100V  
-
-
50  
-
-
-
-
50  
-
CBO  
CBO  
CBO  
CBO  
CB  
CB  
CB  
CB  
=120V, T =100°C  
-
50  
-
-
A
=100V, T =150°C  
-
-
50  
-
A
BV  
BV  
BV  
I =100μA  
180  
160  
6.0  
-
-
160  
150  
5.0  
-
CBO  
CEO  
C
I =1.0mA  
-
-
V
C
I =10μA  
-
-
V
EBO  
E
V
V
V
V
I =10mA, I =1.0mA  
0.15  
0.2  
1.0  
1.0  
-
0.2  
0.5  
1.0  
1.0  
-
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =50mA, I =5.0mA  
-
-
V
C
B
I =10mA, I =1.0mA  
-
-
V
C
B
I =50mA, I =5.0mA  
-
-
V
C
B
h
h
h
V
=5.0V, I =1.0mA  
80  
80  
30  
100  
-
50  
60  
50  
CE  
CE  
CE  
C
V
V
=5.0V, I =10mA  
250  
-
240  
-
FE  
C
=5.0V, I =50mA  
FE  
C
f
V
=10V, I =10mA, f=100MHz  
300  
6.0  
200  
100 300  
MHz  
pF  
T
CE  
C
C
V
=10V, I =0, f=1.0MHz  
-
6.0  
ob  
CB  
E
h
V
=10V, I =1.0mA, f=1.0kHz  
50  
40  
200  
fe  
NF  
CE  
C
V
=5.0V, I =200μA, R =10Ω,  
CE  
f=10Hz to 15.7kHz  
C S  
-
8.0  
-
8.0  
dB  
R1 (20-January 2010)  

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