Datasheet > CGHV31500F-AMP

CGHV31500F-AMP

更新时间： 2024-11-08 01:13:27

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CGHV31500F-AMP 数据手册

PRELIMINARY

CGHV31500F

500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Cree’s CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT)

designed speciﬁcally with high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar ampliﬁer applications.

The transistor is supplied in a ceramic/metal ﬂange package, type 440217.

Typical Performance Over 2.7-3.1 GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

2.7 GHz

2.9 GHz

3.1 GHz

Units

Output Power

665

705

645

Gain

13.2

13.5

13.1

Drain Efﬁciency

Note:

Measured in the CGHV31500F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, P_IN= 45 dBm.

Features

•

2.7 - 3.1 GHz Operation

675 W Typical Output Power

13.3 dB Power Gain

66% Typical Drain Efﬁciency

50 Ohm Internally Matched

<0.3 dB Pulsed Amplitude Droop

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
CGHV31500F-TB	CREE	获取价格	500 W, 2700 - 3100 MHz, 50-Ohm Input
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CGHV35060MP-AMP1	CREE	获取价格	60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
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