Datasheet > CGHV35400

CGHV35400

更新时间： 2024-03-03 10:09:55

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MACOM		/
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11页	610K
描述
400 W; 2900 - 3500 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems

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CGHV35400 数据手册

CGHV35400F

400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output

Matched, GaN HEMT for S-Band Radar Systems

Description

The CGHV35400F is a gallium nitride (GaN) high electron mobility transistor

(HEMT) designed speciﬁcally with high eﬀiciency, high gain, and wide bandwidth

capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar

ampliﬁer applications. The transistor is matched to 50-ohms on the input and 50-

ohms on the output. The CGHV35400 is based on the high power density 50 V, 0.4

μm GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a

ceramic/metal ﬂange package, type 440225.

Package Types: 440225

PN’s: CGHV35400F

Features

•

2.9 - 3.5 GHz operation

500 W typical output power

11 dB power gain

70% typical drain eﬀiciency

50 Ohm internally matched

<0.3 dB pulsed amplitude droop

Typical Performance Over 2.9-3.5 GHz (T_C= 25 °C) of Demonstration Amplifier

Parameter

Output Power

Gain

Units

2.9 GHz

500

3.2 GHz

535

3.5 GHz

480

11.0

11.3

10.8

Drain Eﬀiciency

Note:

Measured in the CGHV35400F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, P_IN= 46 dBm.

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 5.3, SEPTEMBER 2023

For further information and support please visit:

https://www.macom.com/support

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与CGHV35400相关器件

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CGHV35400F-AMP	CREE	获取价格	400 W, 2900 - 3500 MHz, 50-Ohm Input
CGHV35400F-TB	CREE	获取价格	400 W, 2900 - 3500 MHz, 50-Ohm Input
CGHV37400F	CREE	获取价格	400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
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