CGHV35150
150 W, 2900 - 3500 MHz, 50V, GaN HEMT
for S-Band Radar Systems
Description
The CGHV35150 is a gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically with high efficiency, high gain and wide bandwidth
capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar
amplifier applications. The transistor is supplied in a ceramic/metal flange and
pill package.
Package Types: 440193 / 440206
PNs: CGHV35150F / CGHV35150P
Typical Performance 3.1 - 3.5 GHz (TC = 85ºC)
Parameter
Output Power
Gain
3.1 GHz
180
3.2 GHz
180
3.3 GHz
180
3.4 GHz
170
3.5 GHz
150
Units
W
13.5
13.5
13.5
13.3
12.7
dB
Drain Efficiency
50
49
50
49
48
%
Note: Measured in the CGHV35150-AMP application circuit, under 300μs pulse width, 20% duty cycle, PIN = 39 dBm
Features
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Rated Power = 150 W @ TCASE = 85°C
Operating Frequency = 2.9 - 3.5 GHz
Transient 100μsec - 300μsec @ 20% Duty Cycle
13 dB Power Gain @ TCASE = 85°C
50% Typical Drain Efficiency @ TCASE = 85°C
Input Matched
<0.3 dB Pulsed Amplitude Droop
Large Signal Models Available for ADS and MWO
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Rev. 1.4, 2022-12-2
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