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CGHV35150 PDF预览

CGHV35150

更新时间: 2024-04-09 18:59:14
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
10页 575K
描述
150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems

CGHV35150 数据手册

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CGHV35150  
150 W, 2900 - 3500 MHz, 50V, GaN HEMT  
for S-Band Radar Systems  
Description  
The CGHV35150 is a gallium nitride (GaN) high electron mobility transistor  
(HEMT) designed specifically with high efficiency, high gain and wide bandwidth  
capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar  
amplifier applications. The transistor is supplied in a ceramic/metal flange and  
pill package.  
Package Types: 440193 / 440206  
PNs: CGHV35150F / CGHV35150P  
Typical Performance 3.1 - 3.5 GHz (TC = 85ºC)  
Parameter  
Output Power  
Gain  
3.1 GHz  
180  
3.2 GHz  
180  
3.3 GHz  
180  
3.4 GHz  
170  
3.5 GHz  
150  
Units  
W
13.5  
13.5  
13.5  
13.3  
12.7  
dB  
Drain Efficiency  
50  
49  
50  
49  
48  
%
Note: Measured in the CGHV35150-AMP application circuit, under 300μs pulse width, 20% duty cycle, PIN = 39 dBm  
Features  
Rated Power = 150 W @ TCASE = 85°C  
Operating Frequency = 2.9 - 3.5 GHz  
Transient 100μsec - 300μsec @ 20% Duty Cycle  
13 dB Power Gain @ TCASE = 85°C  
50% Typical Drain Efficiency @ TCASE = 85°C  
Input Matched  
<0.3 dB Pulsed Amplitude Droop  
Large Signal Models Available for ADS and MWO  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
Rev. 1.4, 2022-12-2  
For further information and support please visit:  
https://www.macom.com/support  

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