Datasheet > CGHV35060MP

CGHV35060MP

更新时间： 2024-01-30 02:22:20

品牌	Logo	应用领域
科锐 - CREE		LTE
页数	文件大小	规格书
8页	1514K
描述
60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations

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CGHV35060MP 数据手册

PRELIMINARY

CGHV35060MP

60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations

Cree’s CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron

mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP

is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz while the input matched

transistor provides optimal gain, power and efﬁciency in a small 6.5mm x 4.4mm

plastic surface mount (SMT) package. The typical performance plots in the datasheet

are derived with CGHV35060MP matched into a 3.1-3.5GHz high power ampliﬁer.

Typical Performance Over 3.1 - 3.5 GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

3.1 GHz

3.3 GHz

3.5 GHz

Units

Gain

14.5

14.3

13.8

Output Power

Drain Efﬁciency

Note:

Measured in the CGHV35060MP-TB ampliﬁer circuit, under 100 μs pulse width, 10% duty cycle, P_IN= 35 dBm.

Features

•

Reference design ampliﬁer 3.1 - 3.5 GHz

75W Typical output power

14.5 dB power gain

67% Drain efﬁciency

Internally pre-matched on input, unmatched output

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
CGHV35060MP_16	CREE	获取价格	60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
CGHV35060MP-AMP1	CREE	获取价格	60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
CGHV35120F	CREE	获取价格	RF Power Field-Effect Transistor,
CGHV35120F	MACOM	获取价格	120 W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems
CGHV35150	CREE	获取价格	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
CGHV35150	MACOM	获取价格	150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems
CGHV35150F	CREE	获取价格	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
CGHV35150F-AMP	CREE	获取价格	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
CGHV35150P	CREE	获取价格	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
CGHV35150-TB	CREE	获取价格	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems