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CGHV35120F PDF预览

CGHV35120F

更新时间: 2024-01-05 10:42:57
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
10页 540K
描述
RF Power Field-Effect Transistor,

CGHV35120F 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.76Base Number Matches:1

CGHV35120F 数据手册

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CGHV35120F  
120 W, 3100 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems  
Cree’s CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)  
designed specifically with high efficiency, high gain and wide bandwidth capabilities,  
which makes the CGHV35120F ideal for 3.1 - 3.5 GHz S-Band radar amplifier  
applications. The transistor is supplied in a ceramic/metal flange package.  
Typical Performance 3.1 - 3.5 GHz (TC = 85˚C)  
Parameter  
3.1 GHz  
3.2 GHz  
3.3 GHz  
3.4 GHz  
3.5 GHz  
Units  
Output Power  
142  
135  
132  
136  
134  
W
Gain  
13  
12.8  
12.8  
12.9  
12.8  
dB  
Drain Efficiency  
68  
66  
63  
62  
62  
%
Note:Measured in the CGHV35120F-AMP1 application circuit, under 100 µs pulse width, 10% duty cycle, PIN = 38.5 dBm  
Features:  
• Rated Power = 120 W @ TCASE = 85°C  
• Operating Frequency = 3.1 - 3.5 GHz  
• Transient 100 µsec - 300 µsec @ 20% Duty Cycle  
• 13 dB Power Gain @ TCASE = 85°C  
• 62 % Typical Drain Efficiency @ TCASE = 85°C  
• Input Matched  
• <0.3 dB Pulsed Amplitude Droop  
Subject to change without notice.  
www.cree.com/rf  
1

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