Datasheet > CGHV40100F

CGHV40100F

更新时间： 2024-01-18 18:07:19

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
11页	1088K
描述
100 W, DC - 4.0 GHz, 50 V, GaN HEMT

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CGHV40100F 数据手册

CGHV40100

100 W, DC - 4.0 GHz, 50 V, GaN HEMT

Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGHV40100, operating from a 50 volt

rail, offers a general purpose, broadband solution to a variety of RF and

microwave applications. GaN HEMTs offer high efﬁciency, high gain and

wide bandwidth capabilities making the CGHV40100 ideal for linear and

compressed ampliﬁer circuits. The transistor is available in a 2-lead ﬂange

and pill package.

Typical Performance Over 500 MHz - 2.5 GHz ^(T_C^{= 25˚C),}50 V

Parameter

500 MHz

1.0 GHz

1.5 GHz

2.0 GHz

2.5 GHz

Units

Small Signal Gain

17.6

16.9

17.7

17.5

14.8

Saturated Output Power

Drain Efﬁciency @ P_SAT

Input Return Loss

Note:

147

100

141

116

112

5.1

10.5

5.5

8.8

Measured CW in the CGHV40100F-AMP application circuit.

Features

•

Up to 4 GHz Operation

100 W Typical Output Power

17.5 dB Small Signal Gain at 2.0 GHz

Application Circuit for 0.5 - 2.5 GHz

55 % Efﬁciency at P_SAT

50 V Operation

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...11

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与CGHV40100F相关器件

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CGHV40100F-AMP	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40100P	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40100P-AMP	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40100-TB	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40180	MACOM	获取价格	180 W; DC - 2 GHz; GaN HEMT
CGHV40180F	CREE	获取价格	180 W, DC - 2000 MHz, 50 V, GaN HEMT
CGHV40180P	CREE	获取价格	180 W, DC - 2000 MHz, 50 V, GaN HEMT
CGHV40180P-AMP	CREE	获取价格	180 W, DC - 2000 MHz, 50 V, GaN HEMT
CGHV40180P-TB	CREE	获取价格	180 W, DC - 2000 MHz, 50 V, GaN HEMT
CGHV40200	MACOM	获取价格	200 W RF Power GaN HEMT