Datasheet > CGHV59350-AMP1

CGHV59350-AMP1

更新时间： 2024-09-20 01:10:03

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CGHV59350-AMP1 数据手册

PRELIMINARY

CGHV59350

350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems

Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT)

designed speciﬁcally with high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar ampliﬁer applications.

The transistor is supplied in a ceramic/metal ﬂange package, type 440217 and 440218.

Typical Performance Over 5.2 - 5.9 GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

5.2 GHz

5.55 GHz

5.9 GHz

Units

Output Power

440

445

490

Gain

10.5

Drain Efﬁciency

Note:

Measured in the CGHV59350-TB under 100 μs pulse width, 10% duty cycle, P_IN= 46 dBm

Features

•

5.2 - 5.9 GHz Operation

450 W Typical Output Power

• 10.5 dB Power Gain

•

55% Typical Drain Efﬁciency

50 Ohm Internally Matched

<0.3 dB Pulsed Amplitude Droop

Subject to change without notice.

www.cree.com/rf

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型号	品牌	获取价格	描述	数据表
CGHV59350F	CREE	获取价格	350 W, 5200 - 5900 MHz, 50-Ohm Input
CGHV59350P	CREE	获取价格	RF Power Field-Effect Transistor,
CGHV59350-TB	CREE	获取价格	350 W, 5200 - 5900 MHz, 50-Ohm Input
CGHV60040D	CREE	获取价格	40 W, 6.0 GHz, GaN HEMT Die
CGHV60040D-GP4	MACOM	获取价格	40 W; 6.0 GHz; GaN HEMT Die
CGHV60075D	CREE	获取价格	75 W, 6.0 GHz, GaN HEMT Die
CGHV60075D5	CREE	获取价格	19 dB Typical Small Signal Gain at 4 GHz
CGHV60075D5-GP4	MACOM	获取价格	75 W; 6.0 GHz; GaN HEMT Die
CGHV60170D	CREE	获取价格	170 W, 6.0 GHz, 50V GaN HEMT Die
CGHV60170D-GP4	MACOM	获取价格	170 W; 6.0 GHz; 50 V GaN HEMT Die