Datasheet > CGHV35400F-AMP

CGHV35400F-AMP

更新时间： 2024-02-07 20:54:02

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CGHV35400F-AMP 数据手册

CGHV35400F

400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT)

designed speciﬁcally with high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar ampliﬁer applications.

The transistor is supplied in a ceramic/metal ﬂange package, type 440210.

Typical Performance Over 2.9-3.5 GHz (T_C= 85˚C) of Demonstration Ampliﬁer

Parameter

2.9 GHz

3.2 GHz

3.5 GHz

Units

Output Power

375

400

360

Gain

9.8

9.6

Drain Efﬁciency

Note:

Measured in the CGHV35400F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, P_IN= 46 dBm.

Features

•

2.9 - 3.5 GHz Operation

400 W Typical Output Power

10.5 dB Power Gain

60% Typical Drain Efﬁciency

50 Ohm Internally Matched

<0.3 dB Pulsed Amplitude Droop

Subject to change without notice.

www.cree.com/rf

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型号	品牌	获取价格	描述	数据表
CGHV35400F-TB	CREE	获取价格	400 W, 2900 - 3500 MHz, 50-Ohm Input
CGHV37400F	CREE	获取价格	400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
CGHV37400F	MACOM	获取价格	400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems
CGHV38375F	MACOM	获取价格	2.75 - 3.75, 400W GaN on SiC HPA
CGHV40030	CREE	获取价格	30 W, DC - 6 GHz, 50V, GaN HEMT
CGHV40030	MACOM	获取价格	30 W; DC - 6 GHz; 50 V; GaN HEMT
CGHV40030F	CREE	获取价格	30 W, DC - 6 GHz, 50V, GaN HEMT
CGHV40030F-AMP	CREE	获取价格	30 W, DC - 6 GHz, 50V, GaN HEMT
CGHV40030P	CREE	获取价格	30 W, DC - 6 GHz, 50V, GaN HEMT
CGHV40030-TB	CREE	获取价格	30 W, DC - 6 GHz, 50V, GaN HEMT