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CGHV40030 PDF预览

CGHV40030

更新时间: 2024-01-28 08:08:23
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
11页 1165K
描述
30 W, DC - 6 GHz, 50V, GaN HEMT

CGHV40030 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.82
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED

CGHV40030 数据手册

 浏览型号CGHV40030的Datasheet PDF文件第2页浏览型号CGHV40030的Datasheet PDF文件第3页浏览型号CGHV40030的Datasheet PDF文件第4页浏览型号CGHV40030的Datasheet PDF文件第5页浏览型号CGHV40030的Datasheet PDF文件第6页浏览型号CGHV40030的Datasheet PDF文件第7页 
CGHV40030  
30 W, DC - 6 GHz, 50V, GaN HEMT  
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transist
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilitie
The device can be deployed for L, S and C-Band amplifier applications. The datashe
specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 5
volt rail circuit while housed in a 2-lead flange or pill package.  
Typical Performance 0.96 - 1.4 GHz (TC = 25˚C) , 50 V  
Parameter  
0.96 GHz  
1.1 GHz  
1.25 GHz  
1.4 GHz  
Units  
Gain @ PSAT  
15.6  
15.8  
16.6  
15.8  
dB  
Saturated Output Power  
Drain Efficiency @ PSAT  
Note:  
29  
62  
30  
74  
36  
64  
31  
67  
W
%
Measured CW in the CGHV40030-AMP application circuit.  
Features  
Up to 6 GHz Operation  
30 W Typical Output Power  
16 dB Gain at 1.2 GHz  
Application circuit for 0.96 - 1.4 GHz  
70% Efficiency at PSAT  
50 V Operation  
Subject to change without notice.  
www.cree.com/rf  
1

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