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CGHV40050 PDF预览

CGHV40050

更新时间: 2024-03-03 10:10:18
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
11页 697K
描述
50 W; DC - 4.0 GHz; 50 V; GaN HEMT

CGHV40050 数据手册

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CGHV40050  
50 W, DC - 4.0 GHz, 50 V, GaN HEMT  
Description  
The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility  
transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general  
purpose, broadband solution to a variety of RF and microwave applications up  
to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2  
GHz operation instantaneously. It is a demonstration amplifier to showcase the  
CGHV40050’s high efficiency, high gain and wide bandwidth capabilities. The  
device can be used for a range of applications from narrow band UHF, L and S  
Band as well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is  
available in a 2-lead flange and pill package.  
Package Types: 440193 & 440206  
PNs: CGHV40050F & CGHV40050P  
Typical Performance Over 800 MHz - 2.0 GHz (TC = 25ºC), 50 V  
Parameter  
800 MHz  
1.2 GHz  
16.9  
70  
1.4 GHz  
17.7  
63  
1.8 GHz  
2.0 GHz  
Units  
dB  
Small Signal Gain  
Saturated Output Power  
Drain Efficiency @ PSAT  
Input Return Loss  
17.6  
65  
63  
5
17.5  
77  
53  
8
14.8  
60  
52  
5
W
63  
60  
%
5.5  
4.2  
dB  
Note: Measured CW in the CGHV40050F-AMP application circuit.  
Features  
Up to 4 GHz Operation  
77 W Typical Output Power  
17.5 dB Small Signal Gain at 1.8 GHz  
Application Circuit for 0.8 - 2.0 GHz  
53% Efficiency at PSAT  
50 V Operation  
Large Signal Models Available for ADS and MWO  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
Rev. 2.4, 2022-12-2  
For further information and support please visit:  
https://www.macom.com/support  

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