Datasheet > CGHV40050

CGHV40050

更新时间： 2024-03-03 10:10:18

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MACOM		/
页数	文件大小	规格书
11页	697K
描述
50 W; DC - 4.0 GHz; 50 V; GaN HEMT

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CGHV40050 数据手册

CGHV40050

50 W, DC - 4.0 GHz, 50 V, GaN HEMT

Description

The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility

transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general

purpose, broadband solution to a variety of RF and microwave applications up

to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2

GHz operation instantaneously. It is a demonstration amplifier to showcase the

CGHV40050’s high efficiency, high gain and wide bandwidth capabilities. The

device can be used for a range of applications from narrow band UHF, L and S

Band as well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is

available in a 2-lead flange and pill package.

Package Types: 440193 & 440206

PNs: CGHV40050F & CGHV40050P

Typical Performance Over 800 MHz - 2.0 GHz (T_C= 25ºC), 50 V

Parameter

800 MHz

1.2 GHz

16.9

1.4 GHz

17.7

1.8 GHz

2.0 GHz

Units

Small Signal Gain

Saturated Output Power

Drain Efficiency @ P_SAT

Input Return Loss

17.6

17.5

14.8

5.5

4.2

Note: Measured CW in the CGHV40050F-AMP application circuit.

Features

•

Up to 4 GHz Operation

77 W Typical Output Power

17.5 dB Small Signal Gain at 1.8 GHz

Application Circuit for 0.8 - 2.0 GHz

53% Efficiency at P_SAT

50 V Operation

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 2.4, 2022-12-2

For further information and support please visit:

https://www.macom.com/support

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与CGHV40050相关器件

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CGHV40050-AMP	CREE	获取价格	50 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40050F	CREE	获取价格	DC-6GHz
CGHV40050P	CREE	获取价格	RF Power Field-Effect Transistor,
CGHV40050-TB	CREE	获取价格	50 W, DC - 4.0 GHz, 50 V, GaN HEMT
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CGHV40100	MACOM	获取价格	100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT
CGHV40100F	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40100F-AMP	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40100P	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40100P-AMP	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT