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CGHV40050F PDF预览

CGHV40050F

更新时间: 2024-01-08 12:04:16
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
11页 782K
描述
DC-6GHz

CGHV40050F 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.75
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CGHV40050F 数据手册

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CGHV40050  
50 W, DC - 4.0 GHz, 50 V, GaN HEMT  
Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electro
mobility transistor (HEMT). The CGHV40050, operating from a 50 vo
rail, offers a general purpose, broadband solution to a variety of RF an
microwave applications up to 4 GHz. The reference HPA design in th
datasheet operates from 800 MHz to 2 GHz operation instantaneously
It is a demonstration amplifier to showcase the CGHV40050’s high  
efficiency, high gain and wide bandwidth capabilities. The device can be  
used for a range of applications from narrow band UHF, L and S Band as  
well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and  
pill package.  
Typical Performance Over 800 MHz - 2.5 GHz (TC = 25˚C), 50 V  
Parameter  
800 MHz  
1.2 GHz  
1.4 GHz  
1.8 GHz  
2.0 GHz  
Units  
Small Signal Gain  
17.6  
16.9  
17.7  
17.5  
14.8  
dB  
Saturated Output Power  
Drain Efficiency @ PSAT  
Input Return Loss  
Note:  
65  
63  
5
70  
63  
63  
60  
77  
53  
8
60  
52  
5
W
%
5.5  
4.2  
dB  
Measured CW in the CGHV40050F-AMPapplication circuit.  
Features  
Up to 4 GHz Operation  
77 W Typical Output Power  
17.5 dB Small Signal Gain at 1.8 GHz  
Application Circuit for 0.8 - 2.0 GHz  
53 % Efficiency at PSAT  
50 V Operation  
Subject to change without notice.  
www.cree.com/rf  
1

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