Datasheet > CGHV40050F

CGHV40050F

更新时间： 2024-02-21 00:31:51

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
11页	782K
描述
DC-6GHz

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技术参数
数据手册

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CGHV40050F 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.75
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

CGHV40050F 数据手册

CGHV40050

50 W, DC - 4.0 GHz, 50 V, GaN HEMT

Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGHV40050, operating from a 50 volt

rail, offers a general purpose, broadband solution to a variety of RF and

microwave applications up to 4 GHz. The reference HPA design in the

datasheet operates from 800 MHz to 2 GHz operation instantaneously.

It is a demonstration ampliﬁer to showcase the CGHV40050’s high

efﬁciency, high gain and wide bandwidth capabilities. The device can be

used for a range of applications from narrow band UHF, L and S Band as

well as multi-octave bandwidth ampliﬁers up to 4 GHz. The transistor is available in a 2-lead ﬂange and

pill package.

Typical Performance Over 800 MHz - 2.5 GHz ^(T_C^{= 25˚C),}50 V

Parameter

800 MHz

1.2 GHz

1.4 GHz

1.8 GHz

2.0 GHz

Units

Small Signal Gain

17.6

16.9

17.7

17.5

14.8

Saturated Output Power

Drain Efﬁciency @ P_SAT

Input Return Loss

Note:

5.5

4.2

Measured CW in the CGHV40050F-AMPapplication circuit.

Features

•

Up to 4 GHz Operation

77 W Typical Output Power

17.5 dB Small Signal Gain at 1.8 GHz

Application Circuit for 0.8 - 2.0 GHz

53 % Efﬁciency at P_SAT

50 V Operation

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...11

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与CGHV40050F相关器件

型号	品牌	获取价格	描述	数据表
CGHV40050P	CREE	获取价格	RF Power Field-Effect Transistor,
CGHV40050-TB	CREE	获取价格	50 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40100	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40100	MACOM	获取价格	100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT
CGHV40100F	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40100F-AMP	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40100P	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40100P-AMP	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40100-TB	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40180	MACOM	获取价格	180 W; DC - 2 GHz; GaN HEMT