Datasheet > CGHV40030F

CGHV40030F

更新时间： 2024-02-21 20:33:15

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CGHV40030F 数据手册

CGHV40030

30 W, DC - 6 GHz, 50V, GaN HEMT

Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor

(HEMT) designed speciﬁcally for high efﬁciency, high gain and wide bandwidth capabilities.

The device can be deployed for L, S and C-Band ampliﬁer applications. The datasheet

speciﬁcations are based on a 0.96 - 1.4 GHz ampliﬁer. The CGHV40030 operates on a 50

volt rail circuit while housed in a 2-lead ﬂange or pill package.

Typical Performance 0.96 - 1.4 GHz (T_C= 25˚C) , 50 V

Parameter

0.96 GHz

1.1 GHz

1.25 GHz

1.4 GHz

Units

Gain @ P_SAT

15.6

15.8

16.6

15.8

Saturated Output Power

Drain Efﬁciency @ P_SAT

Note:

Measured CW in the CGHV40030-AMP application circuit.

Features

•

Up to 6 GHz Operation

30 W Typical Output Power

16 dB Gain at 1.2 GHz

Application circuit for 0.96 - 1.4 GHz

70% Efﬁciency at P_SAT

50 V Operation

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...11

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型号	品牌	获取价格	描述	数据表
CGHV40030F-AMP	CREE	获取价格	30 W, DC - 6 GHz, 50V, GaN HEMT
CGHV40030P	CREE	获取价格	30 W, DC - 6 GHz, 50V, GaN HEMT
CGHV40030-TB	CREE	获取价格	30 W, DC - 6 GHz, 50V, GaN HEMT
CGHV40050	CREE	获取价格	50 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40050	MACOM	获取价格	50 W; DC - 4.0 GHz; 50 V; GaN HEMT
CGHV40050-AMP	CREE	获取价格	50 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40050F	CREE	获取价格	DC-6GHz
CGHV40050P	CREE	获取价格	RF Power Field-Effect Transistor,
CGHV40050-TB	CREE	获取价格	50 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40100	CREE	获取价格	100 W, DC - 4.0 GHz, 50 V, GaN HEMT