Datasheet > CGHV37400F

CGHV37400F

更新时间： 2024-02-07 15:26:42

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
11页	815K
描述
400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

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CGHV37400F 数据手册

CGHV37400F

400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Cree’s CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT)

designed speciﬁcally with high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGHV37400F ideal for 3.5 - 3.7 GHz S-Band radar ampliﬁer applications.

The transistor is matched to 50-ohms on the input and 50-ohms on the output. The

CGHV35400 is based on Cree’s high power density 50 V, 0.4 µm GaN on silicon carbide

(SiC) foundry process. The transistor is supplied in a ceramic/metal ﬂange package, type

440217.

Typical Performance Over 3.5-3.7 GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

3.5 GHz

3.6

3.7 GHz

Units

Output Power

555

560

555

Gain

11.4

11.5

11.4

Drain Efﬁciency

Note:

Measured in the CGHV37400F-AMP application circuit, under 100 μs pulse width, 10% duty cycle, P_IN= 46 dBm.

Features

•

3.3 - 3.8 GHz Operation

550 W Typical Output Power

11.5 dB Power Gain

55% Typical Drain Efﬁciency

50 Ohm Internally Matched

<0.3 dB Pulsed Amplitude Droop

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...11

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CGHV40030P	CREE	获取价格	30 W, DC - 6 GHz, 50V, GaN HEMT
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