Datasheet > CGHV40030

CGHV40030

更新时间： 2024-09-19 15:18:55

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
15页	1133K
描述
30 W; DC - 6 GHz; 50 V; GaN HEMT

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CGHV40030 数据手册

CGHV40030

30 W, DC - 6 GHz, 50 V, GaN HEMT

Description

The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility

transistor (HEMT) designed specifically for high efficiency, high gain and wide

bandwidth capabilities. The device can be deployed for L-, S- and C-Band

amplifier applications. The datasheet specifications are based on a 0.96 - 1.4

GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while housed in

a 2-lead flange or pill package.

Package Types: 440166 and 440196

PN: CGHV40030

Typical Performance 0.96 - 1.4 GHz (T_C= 25ºC), 50 V

Parameter

0.96 GHz

1.1 GHz

15.8

1.25 GHz

1.4 GHz

15.8

Units

Gain @ P_SAT

15.6

16.6

Saturated Output Power

Drain Eﬀiciency @ P_SAT

Note: Measured CW in the CGHV40030-AMP application circuit.

Features

•

Up to 6 GHz Operation

30 W Typical Output Power

16 dB Gain

Application circuit for 0.96 - 1.4 GHz

70% Efficiency at P_SAT

50 V Operation

Listing of Available Hardware Application Circuits / Demonstration Circuits

Application Circuit

CGHV40030F-AMP

CGHV40030F-AMP2

Operating Frequency

0.96 - 1.4 GHz

Operating Voltage

50 V

0.5 - 2.7 GHz

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 1.6, 2022-12-13

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...15

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与CGHV40030相关器件

型号	品牌	获取价格	描述	数据表
CGHV40030F	CREE	获取价格	30 W, DC - 6 GHz, 50V, GaN HEMT
CGHV40030F-AMP	CREE	获取价格	30 W, DC - 6 GHz, 50V, GaN HEMT
CGHV40030P	CREE	获取价格	30 W, DC - 6 GHz, 50V, GaN HEMT
CGHV40030-TB	CREE	获取价格	30 W, DC - 6 GHz, 50V, GaN HEMT
CGHV40050	CREE	获取价格	50 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40050	MACOM	获取价格	50 W; DC - 4.0 GHz; 50 V; GaN HEMT
CGHV40050-AMP	CREE	获取价格	50 W, DC - 4.0 GHz, 50 V, GaN HEMT
CGHV40050F	CREE	获取价格	DC-6GHz
CGHV40050P	CREE	获取价格	RF Power Field-Effect Transistor,
CGHV40050-TB	CREE	获取价格	50 W, DC - 4.0 GHz, 50 V, GaN HEMT