Datasheet > CGHV37400F

CGHV37400F

更新时间： 2024-03-03 10:09:42

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
10页	546K
描述
400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems

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CGHV37400F 数据手册

CGHV37400F

400 W, 3.5 - 3.7 GHz, 50-Ohm Input/Output

Matched, GaN HEMT for S-Band Radar Systems

Description

The CGHV37400F is a gallium nitride (GaN) high electron mobility

transistor (HEMT) designed speciﬁcally with high eﬀiciency,

high gain and wide bandwidth capabilities, which makes the

CGHV37400F ideal for 3.5 - 3.7 GHz S-Band radar ampliﬁer

applications. The transistor is matched to 50-ohms on the input

and 50-ohms on the output. The CGHV35400 is based on the high

power density 50 V, 0.4 μm GaN-on-Silicon Carbide (SiC) foundry

process. The transistor is supplied in a ceramic metal ﬂange

package, type 440217.

Package Type: 440217

PN: CGHV37400F

Typical Performance Over 3.5-3.7 GHz (T_C= 25ºC) of Demonstration Amplifier

Parameter

Output Power

Gain

3.5 GHz

555

3.6 GHz

560

3.7 GHz

555

Units

11.4

11.5

11.4

Drain Eﬀiciency

555

Note: Measured in the CGHV37400F-AMP application circuit, under 100 μs pulse width, 10% duty cycle, P_IN= 46 dBm

Features

•

3.3 - 3.8 GHz Operation

525 W Typical Output Power

11.5 dB Power Gain

55% Typical Drain Eﬀiciency

50 Ohm Internally Matched

<0.3 dB Pulsed Amplitude Droop

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 2.0, 2022-8-23

For further information and support please visit:

https://www.macom.com/support

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