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CGHV35150F-AMP PDF预览

CGHV35150F-AMP

更新时间: 2024-01-13 22:49:23
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
10页 853K
描述
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

CGHV35150F-AMP 数据手册

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CGHV35150  
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems  
Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEM
designed specifically with high efficiency, high gain and wide bandwidth capabilitie
which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifie
applications. The transistor is supplied in a ceramic/metal flange and pill package.  
Typical Performance 3.1 - 3.5 GHz (TC = 85˚C)  
Parameter  
3.1 GHz  
3.2 GHz  
3.3 GHz  
3.4 GHz  
3.5 GHz  
Units  
Output Power  
180  
180  
180  
170  
150  
dB  
Gain  
13.5  
13.5  
49  
13.5  
13.3  
49  
12.7  
dBc  
Drain Efficiency  
50  
50  
48  
%
Note:Measured in the CGHV35150-AMP application circuit, under 300 µs pulse width, 20% duty cycle, PIN = 39 dBm  
Features:  
• Rated Power = 150 W @ TCASE = 85°C  
• Operating Frequency = 2.9 - 3.5 GHz  
• Transient 100 µsec - 300 µsec @ 20% Duty Cycle  
• 13.5 dB Power Gain @ TCASE = 85°C  
• 50 % Typical Drain Efficiency @ TCASE = 85°C  
• Input Matched  
• <0.3 dB Pulsed Amplitude Droop  
Subject to change without notice.  
www.cree.com/rf  
1

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