Datasheet > CGHV35150F-AMP

CGHV35150F-AMP

更新时间： 2024-02-15 20:42:50

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	853K
描述
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

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CGHV35150F-AMP 数据手册

CGHV35150

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT)

designed speciﬁcally with high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar ampliﬁer

applications. The transistor is supplied in a ceramic/metal ﬂange and pill package.

Typical Performance 3.1 - 3.5 GHz (T_C= 85˚C)

Parameter

3.1 GHz

3.2 GHz

3.3 GHz

3.4 GHz

3.5 GHz

Units

Output Power

180

170

150

Gain

13.5

13.3

12.7

dBc

Drain Efﬁciency

Note:Measured in the CGHV35150-AMP application circuit, under 300 µs pulse width, 20% duty cycle, P_IN= 39 dBm

Features:

• Rated Power = 150 W @ T_CASE= 85°C

• Operating Frequency = 2.9 - 3.5 GHz

• Transient 100 µsec - 300 µsec @ 20% Duty Cycle

• 13.5 dB Power Gain @ T_CASE= 85°C

• 50 % Typical Drain Efﬁciency @ T_CASE= 85°C

• Input Matched

• <0.3 dB Pulsed Amplitude Droop

Subject to change without notice.

www.cree.com/rf

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