型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CGHV35120F | CREE |
获取价格 |
RF Power Field-Effect Transistor, | |
CGHV35120F | MACOM |
获取价格 |
120 W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems | |
CGHV35150 | CREE |
获取价格 |
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems | |
CGHV35150 | MACOM |
获取价格 |
150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems | |
CGHV35150F | CREE |
获取价格 |
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems | |
CGHV35150F-AMP | CREE |
获取价格 |
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems | |
CGHV35150P | CREE |
获取价格 |
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems | |
CGHV35150-TB | CREE |
获取价格 |
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems | |
CGHV35400 | MACOM |
获取价格 |
400 W; 2900 - 3500 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems | |
CGHV35400F | CREE |
获取价格 |
400 W, 2900 - 3500 MHz, 50-Ohm Input |