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BUL89 PDF预览

BUL89

更新时间: 2024-10-31 22:39:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
6页 73K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL89 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:8.39Samacsys Description:Bipolar Transistors - BJT NPN Hi-Volt Fast Sw
最大集电极电流 (IC):12 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):110 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

BUL89 数据手册

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BUL89  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
LOW BASE-DRIVE REQUIREMENTS  
VERY HIGH SWITCHING SPEED  
FULLY CHARACTERIZED AT 125oC  
APPLICATIONS  
ELECTRONIC TRANSFORMER FOR  
HALOGEN LAMPS  
SWITCH MODE POWER SUPPLIES  
3
2
1
TO-220  
DESCRIPTION  
The BUL89 is manufactured using high voltage  
Multiepitaxial Mesa technology for cost-effective  
high performance. It uses a Hollow Emitter  
structure to enhanceswitching speeds.  
The BUL series is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
850  
V
V
400  
9
V
12  
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
25  
A
IB  
6
12  
A
IBM  
Base Peak Current (tp < 5 ms)  
Total Dissipation at Tc = 25 oC  
Storage Temperature  
A
Ptot  
Tstg  
Tj  
110  
W
oC  
oC  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
January 2000  

BUL89 替代型号

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BUL138 STMICROELECTRONICS

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