Datasheet > BULB128

BULB128

更新时间： 2024-09-26 03:23:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
7页	216K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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中文翻译

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数据手册

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BULB128 数据手册

BULB128-1

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

Ordering Code

Marking

Shipment

BULB128-1

BULB128

Tube

■

STMicroelectronics PREFERRED

SALESTYPE

■

NPN TRANSISTOR

HIGH VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

THROUGH HOLE I²PAK (TO-262) POWER

PACKAGE IN TUBE (SUFFIX "-1")

I²PAK

(TO-262)

(Suffix "-1")

APPLICATIONS:

■

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

DESCRIPTION

INTERNAL SCHEMATIC DIAGRAM

The device is manufactured using high voltage

Multi-Epitaxial Planar technology for high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The device is designed for use in lighting

applications and low cost switch-mode power

supplies.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

700

400

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

I_B

I_BM

Base Peak Current (t_p< 5 ms)

P_tot

Total Dissipation at T_c= 25 C

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/7

September 2003

12 3 4 5 6 7

中文翻译

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