Datasheet > BULB128D

BULB128D

更新时间： 2024-09-25 22:39:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
7页	213K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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中文翻译

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数据手册

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BULB128D 数据手册

BULB128D-1

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

Ordering Code

Marking

Shipment

BULB128D-1

BULB128D

Tube

■

STMicroelectronics PREFERRED

SALESTYPE

■

NPN TRANSISTOR

HIGH VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

I²PAK

(TO-262)

APPLICATIONS:

■

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

■

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

INTERNAL SCHEMATIC DIAGRAM

DESCRIPTION

The device is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The device is designed for use in lighting

applications and low cost switch-mode power

supplies.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Value

700

Unit

V_CEO

400

V_EBO

Emitter-Base Voltage

V_(BR)EBO

(I_C= 0, I_B= 2 A, t_p< 10µs, T_j< 150^oC)

Collector Current

I_C

I_CM

I_B

Collector Peak Current (t_p< 5 ms)

Base Current

I_BM

P_tot

T_stg

T_j

Base Peak Current (t_p< 5 ms)

Total Dissipation at T_c= 25 C

^oC

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/7

September 2003

12 3 4 5 6 7

中文翻译

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