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BULD116D-1 PDF预览

BULD116D-1

更新时间: 2024-09-26 20:02:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关晶体管
页数 文件大小 规格书
6页 209K
描述
5A, 200V, NPN, Si, POWER TRANSISTOR, TO-251AA, TO-251, IPAK-3

BULD116D-1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-251AA包装说明:TO-251, IPAK-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
最大集电极电流 (IC):5 A集电极-发射极最大电压:200 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):8
JEDEC-95代码:TO-251AAJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BULD116D-1 数据手册

 浏览型号BULD116D-1的Datasheet PDF文件第2页浏览型号BULD116D-1的Datasheet PDF文件第3页浏览型号BULD116D-1的Datasheet PDF文件第4页浏览型号BULD116D-1的Datasheet PDF文件第5页浏览型号BULD116D-1的Datasheet PDF文件第6页 
BULD116D  
®
MEDIUM VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
INTEGRATED ANTIPARALLEL  
COLLECTOR- EMITTER DIODE  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGE IN TUBE (SUFFIX "-1")  
3
2
1
APPLICATIONS:  
COMPACT FLUORESCENT LAMPS UP TO  
23 W AT 110 V A.C. MAINS  
IPAK  
TO-251  
("Suffix "-1")  
FLYBACK AND FORWARD SINGLE  
TRANSISTOR LOW POWER CONVERTERS  
AT 110 V A.C. MAINS  
DESCRIPTION  
The device is manufactured using Multi Epitaxial  
Planar technology for high switching speeds and  
medium voltage capability.  
INTERNAL SCHEMATIC DIAGRAM  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The device is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
400  
V
V
200  
9
V
5
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
10  
A
IB  
2
A
IBM  
Base Peak Current (tp < 5 ms)  
4
20  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
September 2003  

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