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BUL903EDFP

更新时间: 2024-09-26 03:23:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
7页 259K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL903EDFP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220FP, 3 PIN针数:3
Reach Compliance Code:not_compliant风险等级:5.82
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):5 A集电极-发射极最大电压:400 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):8
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUL903EDFP 数据手册

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BUL903EDFP  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
INTEGRATED ANTISATURATION AND  
PROTECTION NETWORK  
INTEGRATED ANTIPARALLEL COLLECTOR  
EMITTER DIODE  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
ARCING TEST SELF PROTECTED  
FULLY INSULATED PACKAGE (U.L.  
COMPLIANT) FOR EASY MOUNTING  
3
2
1
TO-220FP  
APPLICATIONS  
FOUR LAMP ELECTRONIC BALLAST FOR  
120 V MAINS IN PUSH-PULL  
CONFIGURATION  
DESCRIPTION  
INTERNAL SCHEMATIC DIAGRAM  
The BUL903EDFP is manufactured using high  
voltage Multi Epitaxial Planar technology for high  
switching speeds and high voltage capability.  
The device has been designed to operate without  
baker clamp and transil protection. This enables  
saving from 2 up to 10 components in the  
application.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
900  
400  
7
V
V
V
A
A
A
A
W
V
5
ICM  
Collector Peak Current (tp <5 ms)  
Base Current  
8
IB  
2
IBM  
Base Peak Current (tp <5 ms)  
Total Dissipation at Tc = 25 oC  
4
Ptot  
35  
1500  
Visol  
Insulation Withstand Voltage (RMS) from All  
Three Leads to Exernal Heatsink  
Storage Temperature  
Tstg  
Tj  
-65 to 150  
150  
oC  
oC  
Max. Operating Junction Temperature  
1/7  
September 2003  

BUL903EDFP 替代型号

型号 品牌 替代类型 描述 数据表
BUL903ED STMICROELECTRONICS

类似代替

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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