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BULD1101ET4 PDF预览

BULD1101ET4

更新时间: 2024-09-25 23:14:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压
页数 文件大小 规格书
7页 232K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BULD1101ET4 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252包装说明:ROHS COMPLIANT, DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N最大集电极电流 (IC):3 A
集电极-发射极最大电压:450 V配置:SINGLE
最小直流电流增益 (hFE):6JEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BULD1101ET4 数据手册

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BULD1101ET4  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
PRELIMINARY DATA  
Ordering Code  
Marking  
Shipment  
BULD1101ET4  
BULD1101E  
Tape & Reel  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
3
VERY HIGH SWITCHING SPEED  
LARGE RBSOA  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX "T4")  
1
DPAK  
TO-252  
(Suffix "T4")  
APPLICATIONS  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
DESCRIPTION  
The device is manufactured using High Voltage  
Multi Epitaxial Planar technology for high  
switching speeds and high voltage capability. It  
uses a Cellular Emitter structure with planar edge  
termination to enhance switching speeds while  
maintaining a wide RBSOA.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
1100  
V
V
450  
12  
V
3
A
ICM  
Collector Peak Current (tp <5 ms)  
Base Current  
6
A
IB  
1.5  
A
IBM  
Base Peak Current (tp <5 ms)  
3
35  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
April 2003  

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