Datasheet > BULB39DT4

BULB39DT4

更新时间： 2024-09-25 23:37:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
6页	67K
描述
TRANSISTOR \| BJT \| NPN \| 450V V(BR)CEO \| 4A I(C) \| TO-263AB

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中文翻译

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数据手册

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BULB39DT4 数据手册

BULB39D

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

NPN TRANSISTOR

HIGH VOLTAGE CAPABILITY

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

HIGH RUGGEDNESS

SURFACE-MOUNTING D²PAK (TO-263)

POWER PACKAGE IN TAPE & REEL (Suffix

”T4”)

APPLICATIONS

■

ELECTRONIC TRANSFORMERS FOR

HALOGEN LAMPS

SWITCH MODE POWER SUPPLIES

D²PAK

(TO-263)

(Suffix ”T4”)

■

DESCRIPTION

The BULB39D is manufactured using high

voltage Multi Epitaxial Planar technology to

enhance switching speedswhile maintaining wide

RBSOA.

INTERNAL SCHEMATIC DIAGRAM

The BUL series is designed for use in electronics

transformers for halogen lamps.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

850

450

I_CM

Collector Peak Current (t_p<5 ms)

Base Current

I_B

I_BM

Base Peak Current (t_p<5 ms)

Total Dissipation at T_c= 25 ^oC

Storage Temperature

P_tot

T_stg

T_j

^oC

-65 to 150

150

Max. Operating Junction Temperature

1/6

August 2001

12 3 4 5 6

中文翻译

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