Datasheet > BULB49D

BULB49D

更新时间： 2024-09-25 21:54:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
7页	255K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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中文翻译

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数据手册

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BULB49D 数据手册

BULB49D

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

Ordering Code

Marking

Package / Shipment

BULB49DT4

BULB49D

D PAK / Tape & Reel

■

HIGH VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

HIGH RUGGEDNESS

SURFACE MOUNTING TO-263 (D PAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4”)

TO-263

D PAK

(Suffix ”T4”)

APPLICATIONS:

■

ELECTRONIC TRANSFORMERS FOR

HALOGEN LAMPS

■

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

INTERNAL SCHEMATIC DIAGRAM

DESCRIPTION

The device is manufactured using High Voltage

Multi Epitaxial Planar technology for high switching

speeds and high voltage capability.

The BULB49D is designed for use in electronic

transformers for halogen lamps.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

850

Unit

CES

Collector-Emitter Voltage (V = 0)

CEO

Collector-Emitter Voltage (I = 0)

450

Emitter-Base Voltage (I = 0, I < 2 A, t < 10 ms)

EBO

(BR)EBO

Collector Current

Collector Peak Current (t < 5 ms)

Base Current

Base Peak Current (t < 5 ms)

Total Dissipation at T = 25 °C

°C

tot

Storage Temperature

–65 to 150

150

stg

Max. Operating Junction Temperature

September 2003

1/7

12 3 4 5 6 7

中文翻译

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