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BULB742C-1 PDF预览

BULB742C-1

更新时间: 2024-09-26 21:21:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关晶体管
页数 文件大小 规格书
14页 507K
描述
4A, 400V, NPN, Si, POWER TRANSISTOR, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3

BULB742C-1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:ROHS COMPLIANT, TO-262, I2PAK-3针数:3
Reach Compliance Code:not_compliant风险等级:5.82
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):70 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BULB742C-1 数据手册

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BUL742C  
BULB742C  
High voltage fast-switching  
NPN power transistor  
Features  
TAB  
Low spread of dynamic parameters  
High voltage capability  
3
3
2
Minimum lot-to-lot spread for reliable operation  
Very high switching speed  
2
1
1
TO-220FP  
TO-220  
TAB  
TAB  
Applications  
Electronic ballast for fluorescent lighting  
Switch mode power supplies  
3
3
1
2
1
D²PAK  
I²PAK  
Description  
The devices are manufactured using high voltage  
multi-epitaxial planar technology for high  
switching speeds and high voltage capability.  
Thanks to an increased intermediate layer, it has  
an intrinsic ruggedness which enables the  
transistor to withstand an high collector current  
level during breakdown condition, without using  
the transil protection usually necessary in typical  
converters for lamp ballast.  
Figure 1.  
Internal schematic diagram  
Table 1.  
Order codes  
BUL742C  
Device summary  
Markings  
Packages  
Packaging  
BUL742C  
BUL742CFP  
BULB742C  
BULB742C  
TO-220  
TO-220FP  
PAK  
BUL742CFP  
BULB742C-1  
BULB742CT4  
Tube  
PAK  
Tape and reel  
November 2010  
Doc ID 9488 Rev 4  
1/14  
www.st.com  
14  

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