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BUL903ED_01 PDF预览

BUL903ED_01

更新时间: 2024-09-26 06:44:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
6页 180K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL903ED_01 数据手册

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BUL903ED  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
INTEGRATED ANTISATURATION AND  
PROTECTION NETWORK  
INTEGRATED ANTIPARALLEL COLLECTOR  
EMITTER DIODE  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
ARCING TEST SELF PROTECTED  
3
2
1
APPLICATIONS  
TO-220  
LAMP ELECTRONIC BALLAST FOR  
FLUORESCENT LIGHTING USING 277V  
HALF BRIDGE CURRENT-FED  
CONFIGURATION  
DESCRIPTION  
The BUL903ED is manufactured using high  
voltage Multi Epitaxial Planar technology for high  
switching speeds and high voltage capability.  
INTERNAL SCHEMATIC DIAGRAM  
The device has been designed to operate without  
baker clamp and transil protection. This enables  
saving from 2 up to 10 components in the  
application.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
900  
V
V
400  
7
V
5
A
ICM  
Collector Peak Current (tp <5 ms)  
Base Current  
8
A
IB  
2
A
IBM  
Base Peak Current (tp <5 ms)  
4
70  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
February 2001  

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