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BULB128D-1 PDF预览

BULB128D-1

更新时间: 2024-09-25 22:11:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压
页数 文件大小 规格书
7页 213K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BULB128D-1 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:TO-262, I2PAK-3
针数:3Reach Compliance Code:not_compliant
风险等级:5.82Is Samacsys:N
最大集电极电流 (IC):4 A集电极-发射极最大电压:400 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):245
极性/信道类型:NPN最大功率耗散 (Abs):70 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BULB128D-1 数据手册

 浏览型号BULB128D-1的Datasheet PDF文件第2页浏览型号BULB128D-1的Datasheet PDF文件第3页浏览型号BULB128D-1的Datasheet PDF文件第4页浏览型号BULB128D-1的Datasheet PDF文件第5页浏览型号BULB128D-1的Datasheet PDF文件第6页浏览型号BULB128D-1的Datasheet PDF文件第7页 
BULB128D-1  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
Ordering Code  
Marking  
Shipment  
BULB128D-1  
BULB128D  
Tube  
STMicroelectronics PREFERRED  
SALESTYPE  
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
3
2
1
VERY HIGH SWITCHING SPEED  
INTEGRATED ANTIPARALLEL  
COLLECTOR-EMITTER DIODE  
I2PAK  
(TO-262)  
APPLICATIONS:  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
FLYBACK AND FORWARD SINGLE  
TRANSISTOR LOW POWER CONVERTERS  
INTERNAL SCHEMATIC DIAGRAM  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The device is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Value  
700  
Unit  
V
V
V
VCEO  
400  
VEBO  
Emitter-Base Voltage  
V(BR)EBO  
(IC = 0, IB = 2 A, tp < 10µs, Tj < 150oC)  
Collector Current  
IC  
ICM  
IB  
4
A
A
Collector Peak Current (tp < 5 ms)  
Base Current  
8
2
A
IBM  
Ptot  
Tstg  
Tj  
Base Peak Current (tp < 5 ms)  
4
70  
A
o
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
September 2003  

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