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BULB128-1 PDF预览

BULB128-1

更新时间: 2024-09-26 03:23:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压
页数 文件大小 规格书
7页 216K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BULB128-1 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:TO-262, I2PAK-3针数:3
Reach Compliance Code:not_compliant风险等级:5.8
Is Samacsys:N最大集电极电流 (IC):4 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):14JEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):70 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BULB128-1 数据手册

 浏览型号BULB128-1的Datasheet PDF文件第2页浏览型号BULB128-1的Datasheet PDF文件第3页浏览型号BULB128-1的Datasheet PDF文件第4页浏览型号BULB128-1的Datasheet PDF文件第5页浏览型号BULB128-1的Datasheet PDF文件第6页浏览型号BULB128-1的Datasheet PDF文件第7页 
BULB128-1  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
Ordering Code  
Marking  
Shipment  
BULB128-1  
BULB128  
Tube  
STMicroelectronics PREFERRED  
SALESTYPE  
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
3
2
1
VERY HIGH SWITCHING SPEED  
THROUGH HOLE I2PAK (TO-262) POWER  
PACKAGE IN TUBE (SUFFIX "-1")  
I2PAK  
(TO-262)  
(Suffix "-1")  
APPLICATIONS:  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
DESCRIPTION  
INTERNAL SCHEMATIC DIAGRAM  
The device is manufactured using high voltage  
Multi-Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The device is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
700  
V
V
400  
9
V
4
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
8
A
IB  
2
A
IBM  
Base Peak Current (tp < 5 ms)  
4
70  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
September 2003  

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