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BULB49DT4 PDF预览

BULB49DT4

更新时间: 2024-09-25 21:54:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
7页 255K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BULB49DT4 技术参数

是否Rohs认证: 符合生命周期:End Of Life
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.74
最大集电极电流 (IC):5 A集电极-发射极最大电压:450 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):4
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:NPN
最大功率耗散 (Abs):80 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BULB49DT4 数据手册

 浏览型号BULB49DT4的Datasheet PDF文件第2页浏览型号BULB49DT4的Datasheet PDF文件第3页浏览型号BULB49DT4的Datasheet PDF文件第4页浏览型号BULB49DT4的Datasheet PDF文件第5页浏览型号BULB49DT4的Datasheet PDF文件第6页浏览型号BULB49DT4的Datasheet PDF文件第7页 
BULB49D  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
Ordering Code  
Marking  
Package / Shipment  
2
BULB49DT4  
BULB49D  
D PAK / Tape & Reel  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
HIGH RUGGEDNESS  
SURFACE MOUNTING TO-263 (D PAK)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4”)  
3
1
2
TO-263  
D PAK  
2
(Suffix ”T4”)  
APPLICATIONS:  
ELECTRONIC TRANSFORMERS FOR  
HALOGEN LAMPS  
FLYBACK AND FORWARD SINGLE  
TRANSISTOR LOW POWER CONVERTERS  
INTERNAL SCHEMATIC DIAGRAM  
DESCRIPTION  
The device is manufactured using High Voltage  
Multi Epitaxial Planar technology for high switching  
speeds and high voltage capability.  
The BULB49D is designed for use in electronic  
transformers for halogen lamps.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
850  
Unit  
V
V
CES  
Collector-Emitter Voltage (V = 0)  
BE  
V
CEO  
Collector-Emitter Voltage (I = 0)  
450  
V
B
V
Emitter-Base Voltage (I = 0, I < 2 A, t < 10 ms)  
V
V
EBO  
C
B
p
(BR)EBO  
I
C
Collector Current  
5
A
I
Collector Peak Current (t < 5 ms)  
10  
A
CM  
p
I
Base Current  
2
A
B
I
Base Peak Current (t < 5 ms)  
4
80  
A
BM  
p
P
Total Dissipation at T = 25 °C  
W
°C  
°C  
tot  
c
T
Storage Temperature  
–65 to 150  
150  
stg  
T
j
Max. Operating Junction Temperature  
September 2003  
1/7  

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