Datasheet > BUL49D_01

BUL49D_01

更新时间： 2024-11-14 03:23:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
6页	202K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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中文翻译

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数据手册

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BUL49D_01 数据手册

BUL49D

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

NPN TRANSISTOR

HIGH VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

HIGH RUGGEDNESS

APPLICATIONS

■

ELECTRONIC TRANSFORMERS FOR

HALOGEN LAMPS

■

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

TO-220

DESCRIPTION

The BUL49D is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and medium voltage capability.

The BUL49D is designed for use in electronic

transformers for halogen lamps.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage

Value

850

Unit

V_CEO

450

V_EBO

BV_EBO

(I_C= 0, I_B< 2.5 A, t_p< 10µs, T_J< 150 C)

I_C

I_CM

I_B

Collector Current

Collector Peak Current (t_p< 5 ms)

Base Current

I_BM

P_tot

T_stg

T_j

Base Peak Current (t_p< 5 ms)

Total Dissipation at Tc = 25 ^oC

Storage Temperature

^oC

-65 to 150

150

Max. Operating Junction Temperature

1/6

June 2001

12 3 4 5 6

中文翻译

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