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BUL49D_01 PDF预览

BUL49D_01

更新时间: 2024-09-26 03:23:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
6页 202K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL49D_01 数据手册

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BUL49D  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
HIGH RUGGEDNESS  
APPLICATIONS  
3
2
ELECTRONIC TRANSFORMERS FOR  
HALOGEN LAMPS  
1
FLYBACK AND FORWARD SINGLE  
TRANSISTOR LOW POWER CONVERTERS  
TO-220  
DESCRIPTION  
The BUL49D is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
The BUL49D is designed for use in electronic  
transformers for halogen lamps.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage  
Value  
850  
Unit  
V
V
V
VCEO  
450  
VEBO  
BVEBO  
o
(IC = 0, IB < 2.5 A, tp < 10µs, TJ < 150 C)  
IC  
ICM  
IB  
Collector Current  
5
A
A
Collector Peak Current (tp < 5 ms)  
Base Current  
10  
2
A
IBM  
Ptot  
Tstg  
Tj  
Base Peak Current (tp < 5 ms)  
Total Dissipation at Tc = 25 oC  
Storage Temperature  
4
80  
A
W
oC  
oC  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
June 2001  

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