Datasheet > BUL510

BUL510

更新时间： 2024-09-26 06:44:39

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	92K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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BUL510 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BUL510

DESCRIPTION

·With TO-220C package

·High voltage,high speed

APPLICATIONS

·Electronic ballasts for

fluorescent lighting

·Switch mode power supplies

·Electronic transformer for

halogen lamp

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

Open emitter

VALUE

1000

450

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Open base

Open collector

Collector current (DC)

Collector current-Peak

Base current (DC)

I_CM

t_p<5ms

I_B

3.5

I_BM

Base current-Peak

t_p<5ms

T_C=25ꢀ

P_tot

Total power dissipation

Maximum operating junction temperature

Storage temperature

100

150

-65~150

ꢀ

T_j

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Thermal resistance junction to case

1.25

ꢀ/W

R_{th j-case}

12 3

中文翻译

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与BUL510相关器件

型号	品牌	获取价格	描述	数据表
BUL510_03	STMICROELECTRONICS	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL51A	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 30A I(C) \| SOT-93
BUL51B	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 40A I(C) \| SOT-93
BUL52	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL52A	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL52AFI	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL52ASMD	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed
BUL52B	SAVANTIC	获取价格	Silicon PNP Power Transistors
BUL52B	JMNIC	获取价格	Silicon Power Transistors
BUL52B	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR