Datasheet > BUL52B

BUL52B

更新时间： 2024-09-26 06:44:39

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	91K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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BUL52B 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

BUL52B

DESCRIPTION

·With TO-220C package

·High voltage

·Fast switching

·High energy rating

APPLICATIONS

·Designed for use in electronic

ballast applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Base current

CONDITIONS

VALUE

800

400

UNIT

Open emitter

Open base

ꢀ

Open collector

I_CM

I_B

P_tot

Total power dissipation

Storage temperature

T_C=25ꢀ

100

-55~150

T_stg

12 3

中文翻译

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与BUL52B相关器件

型号	品牌	获取价格	描述	数据表
BUL52BFI	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL52BSMD	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed
BUL53A	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL53ASMD	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed
BUL53B	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL53BSMD	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL54	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL54A	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL54AFI	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL54ASMD	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR