Datasheet > BUL52BFI

BUL52BFI

更新时间： 2024-09-25 22:17:31

品牌	Logo	应用领域
SEME-LAB		晶体晶体管高压
页数	文件大小	规格书
2页	22K
描述
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

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BUL52BFI 数据手册

BUL52BFI

SEME

LAB

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

MECHANICAL DATA

Dimensions in mm

HIGH SPEED NPN

10.2

SILICON POWER TRANSISTOR

3.6 Dia.

Designed for use in

electronic ballast applications

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE

1.3

• FAST SWITCHING

0.85

• HIGH ENERGY RATING

2.54 2.54

FEATURES

• Multi–base for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

ISOLATED TO220

Pin 1 – Base

Pin 2 – Collector

Pin 3 – Emitter

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

• Triple Guard Rings for improved control of

high voltages.

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

800V

case

Collector – Base Voltage

Collector – Emitter Voltage (I = 0)

CBO

CEO

EBO

400V

Emitter – Base Voltage (I = 0)

10V

Continuous Collector Current

Peak Collector Current

Base Current

12A

C(PK)

Total Dissipation at T

= 25°C

45W

tot

case

Operating and Storage Temperature Range

–55 to +150°C

stg

Prelim. 2/97

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

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