5秒后页面跳转
BUL57 PDF预览

BUL57

更新时间: 2024-11-13 22:17:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
7页 83K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

BUL57 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.72其他特性:HIGH RELIABILITY
最大集电极电流 (IC):8 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):6
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:85 W
最大功率耗散 (Abs):75 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):2710 nsVCEsat-Max:2 V
Base Number Matches:1

BUL57 数据手册

 浏览型号BUL57的Datasheet PDF文件第2页浏览型号BUL57的Datasheet PDF文件第3页浏览型号BUL57的Datasheet PDF文件第4页浏览型号BUL57的Datasheet PDF文件第5页浏览型号BUL57的Datasheet PDF文件第6页浏览型号BUL57的Datasheet PDF文件第7页 
BUL57  
BUL57FP  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
NPN TRANSISTORS  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLEOPERATION  
VERY HIGH SWITCHING SPEED  
FULLY CHARACTERIZED AT 125oC  
LARGE RBSOA  
3
3
2
2
1
1
TO-220FP FULLY ISOLATED PACKAGE  
(U.L. COMPLIANT)  
TO-220  
TO-220FP  
APPLICATIONS:  
ELECTRONIC BALLASTSFOR  
FLUORESCENT LIGHTING  
SWITCH MODE POWER SUPPLIES  
DESCRIPTION  
INTERNAL SCHEMATIC DIAGRAM  
The devices are manufacturedusing high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
They use a Cellular Emitter structure with planar  
edge termination to enhance switching speeds.  
The devices are designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
BUL57  
BUL57FP  
VCES  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
700  
400  
9
V
V
V
8
A
ICM  
IB  
Collector Peak Current (tp < 5 ms)  
Base Current  
16  
4
A
A
IBM  
Ptot  
Tstg  
Tj  
Base Peak Current (tp < 5 ms)  
7
A
o
Total Dissipation at Tc = 25 C  
85  
35  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
January 1999  

BUL57 替代型号

型号 品牌 替代类型 描述 数据表
KSE13007 FAIRCHILD

功能相似

High Voltage Switch Mode Application
BUL59 STMICROELECTRONICS

功能相似

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

与BUL57相关器件

型号 品牌 获取价格 描述 数据表
BUL57A SEME-LAB

获取价格

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL57ASMD SEME-LAB

获取价格

Bipolar NPN Device in a Hermetically sealed
BUL57FP STMICROELECTRONICS

获取价格

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
BUL57PI ETC

获取价格

TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | SOT-186
BUL58 SEME-LAB

获取价格

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL58A SEME-LAB

获取价格

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL58ASMD SEME-LAB

获取价格

Bipolar NPN Device in a Hermetically sealed
BUL58B SEME-LAB

获取价格

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL58BSMD SEME-LAB

获取价格

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL58D STMICROELECTRONICS

获取价格

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR