是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | CASE 221A-09, TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.46 |
其他特性: | BUILT-IN EFFICIENT ANTISATURATION NETWORK | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 440 V |
配置: | SINGLE WITH BUILT-IN DIODE | 最小直流电流增益 (hFE): | 18 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 75 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 13 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUL642D2G | ONSEMI |
获取价格 |
High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and B | |
BUL64A | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL64B | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL654 | STMICROELECTRONICS |
获取价格 |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
BUL65A | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN | |
BUL65B | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL66A | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL66B | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL67 | STMICROELECTRONICS |
获取价格 |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
BUL6822 | JINANJINGHENG |
获取价格 |
TRANSISTORE |