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BUL642D2

更新时间: 2024-11-14 12:49:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
8页 101K
描述
High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network

BUL642D2 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:CASE 221A-09, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.46
其他特性:BUILT-IN EFFICIENT ANTISATURATION NETWORK外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:440 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):18
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):13 MHzBase Number Matches:1

BUL642D2 数据手册

 浏览型号BUL642D2的Datasheet PDF文件第2页浏览型号BUL642D2的Datasheet PDF文件第3页浏览型号BUL642D2的Datasheet PDF文件第4页浏览型号BUL642D2的Datasheet PDF文件第5页浏览型号BUL642D2的Datasheet PDF文件第6页浏览型号BUL642D2的Datasheet PDF文件第7页 
BUL642D2  
High Speed, High Gain  
Bipolar NPN Transistor with  
Integrated  
Collector−Emitter and  
Built−in Efficient  
Antisaturation Network  
http://onsemi.com  
3 AMPERES  
825 VOLTS  
75 WATTS  
The BUL642D2 is a state−of−the−art High Speed High Gain  
Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to  
lot minimum spread (150 ns on storage time) make it ideally suitable  
for Light Ballast Application. A new development process brings  
avalanche energy capability, making the device extremely rugged.  
POWER TRANSISTOR  
Features  
Low Base Drive Requirement  
High Peak DC Current Gain (55 Typical) @ I = 300 mA/5 V  
C
Extremely Low Storage Time Min/Max Guarantees Due to the  
H2BIP Structure which Minimizes the Spread  
Integrated Collector−Emitter Free Wheeling Diode  
Fully Characterized Dynamic V  
CEsat  
MARKING  
DIAGRAM  
“Six Sigma” Process Providing Tight and Reproducible Parameter  
Spreads  
Avalanche Energy 20 mJ Typical Capability  
Pb−Free Package is Available*  
4
TO−220AB  
CASE 221A  
STYLE 1  
BUL642D2G  
AYWW  
1
2
3
BUL642D2 = Device Code  
A
= Assembly Location  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
ORDERING INFORMATION  
Device  
BUL642D2  
BUL642D2G  
Package  
Shipping  
50 Units/Rail  
50 Units/Rail  
TO−220  
TO−220  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
1
© Semiconductor Components Industries, LLC, 2005  
Publication Order Number:  
August, 2005 − Rev. 1  
BUL642D2/D  

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